High-Performance MoS2 Complementary Inverter Prepared by Oxygen Plasma Doping High-Performance MoS2 Complementary Inverter Prepared by Oxygen Plasma Doping AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01070

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Two-dimensional transition-metal chalcogenide has become one of the most promising materials for miniaturization beyond Moore’s law due to its atomic-level thickness and excellent semiconductor properties. The inverter is the most basic logic gate circuit. Using double-temperature zone chemical vapor deposition and oxygen plasma doping technique, we obtained n-type and p-type MoS2 materials and designed an MoS2 CMOS inverter, showing excellent electrical performance. Under the condition of Vdd = 5 V, the peak voltage gain of the inverter is 7.48, the maximum static power consumption is 37.7 nW, the noise margin low is 0.45Vdd, the noise margin high is 0.32Vdd, and the inverter exhibits better Vin–Vout signal matching. After a 42 day duration in an air environment at room temperature, the Vout of the inverter was reduced by only 3.75% in the case of a high level of output voltage, and the low level of output voltage is basically unchanged.