Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00508

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We have studied the effect of barrier-controlled electrodes on characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using an interlayer with modulated oxygen defects. Interlayers of a-IGZO with different electrical resistivities were controlled with various oxygen ratios during the RF sputtering deposition. As the ratio of O2/(O2 + Ar) was increased from 0 to 20%, the carrier concentration decreased from 2.84 × 1018 to 1.56 × 1014 cm–3 and the electrical resistivity increased from 0.12 to 9600 Ω·cm. Using this result, a-IGZO thin layers with different resistivities (low and high) to control the contact barriers were inserted between the a-IGZO TFT channel and both the source and drain electrodes. In the case of a-IGZO TFT with a low resistivity interlayer, the threshold voltage (Vth) was shifted by −4.1 V compared to the reference device without an interlayer. In addition, on/off ratio, the subthreshold swing, and the mobility of the devices were also enhanced by achieving Ohmic contact. In contrast, the a-IGZO TFT with a high resistivity interlayer showed a positive Vth shift of 1.5 V and also improved device performance, while maintaining a mobility of ∼84% of the reference device due to the energy barrier.