Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf0.5Zr0.5O2 Film Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf0.5Zr0.5O2 Film AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00902

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As a high-κ dielectric material, hafnium oxide has excellent potential for applications in the fields of both memristor and ferroelectric materials. It is now mostly believed that the ferroelectricity of hafnium oxide films originates from the polar orthorhombic phase. The effect of this polar orthorhombic phase on the memristor properties of the hafnium oxide films is still uncertain. In this work, the proportion of the orthorhombic phase in the films was influenced by varying the preparation parameters, and the microstructure was further determined by microscopic characterization. High cooling rate favors the orthorhombic phase and more uniform microstructure, and the multiresistance state and synaptic behavior of the HZO film was investigated, which shows that the HZO film in the orthorhombic phase has good potential in memristor applications.