Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01200

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In this work, a hybrid organic–inorganic perovskite (HOIP)-based memristor is presented that shows two different types of bipolar resistive switching (BRS) by applying electric fields of opposite polarities. The first type of BRS, referred to as “type A” here, exhibits a VSET, VRESET, and ON/OFF ratio of 0.47 V, −0.32 V, and 369.91, respectively. On the other hand, the second type of BRS, referred to as “type B” here, exhibits a VSET and VRESET of −0.32 and 0.42 V, respectively, along with an excellent ON/OFF ratio of 5882.32. The pristine HOIP memristor requires a positive voltage for electroforming, followed by an exhibition of type A switching, which can be converted to type B by keeping the compliance to a lower value. Based on the experimental results, a possible mechanism for both types of BRS has been presented. Also, experimental data fitting shows that the memristor current during its high resistance state is dominated by the tunnelling mechanism for type A switching and by diffusion current for type B switching. On the other hand, both types show Ohmic conduction in their ON state. With proper selection and control of the polarity of operating field and compliance current, I–V characteristics similar to that expected from complementary resistive switching behavior can be obtained, which could be useful to reduce the problem of sneak current in resistive random-access memory crossbar arrays.