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Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing AITranslate

Henan University; Henan University; Henan University
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Publisher: ACS
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Abstract AITranslate

A highly repeatable threshold switching was found in the Au/Cr/BaTiO3/Nb:SrTiO3/In system. Based on the dependence of threshold and hold voltage on the compliance current and measurement temperature, threshold switching can be ascribed to the formation/disrupture of oxygen vacancy conductive filaments. Short-term synaptic plasticity of biological synapses has been successfully simulated in this device. Furthermore, the short-term depression was found to be greatly enhanced at a small pulse width/amplitude/interval. The short-term potentiation and depression can be successfully switched using an alternating low- and high-frequency pulse sequence. These results provide insights into the potential for using BaTiO3/Nb:SrTiO3 epitaxial heterojunction in neuromorphic computing.

KeyWords AITranslate

threshold switching ferroelectric BTO shortterm synaptic plasticity neuromorphic computing
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.1c01163

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Citation Information:

A highly repeatable threshold switching was found in the Au/Cr/BaTiO3/Nb:SrTiO3/In system. Based on the dependence of threshold and hold voltage on the compliance current and measurement temperature, threshold switching can be ascribed to the formation/disrupture of oxygen vacancy conductive filaments. Short-term synaptic plasticity of biological synapses has been successfully simulated in this device. Furthermore, the short-term depression was found to be greatly enhanced at a small pulse width/amplitude/interval. The short-term potentiation and depression can be successfully switched using an alternating low- and high-frequency pulse sequence. These results provide insights into the potential for using BaTiO3/Nb:SrTiO3 epitaxial heterojunction in neuromorphic computing.

quote

GB/T 7714-2015 [1] Peilin Liu, Caihong Jia, Weifeng Zhang. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c01163.
MLA [1] Peilin Liu, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c01163.
APA [1] Peilin Liu, Caihong Jia, & Weifeng Zhang. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c01163
IEEE [1] Peilin Liu, Caihong Jia, and Weifeng Zhang, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c01163. keywords: {threshold switching ferroelectric BTO shortterm synaptic plasticity neuromorphic computing}