Electric Field Control of Magnetization Reversal and Multiple Magnetic States in a Doubly Exchange-Biased Co/IrMn Bilayer Electric Field Control of Magnetization Reversal and Multiple Magnetic States in a Doubly Exchange-Biased Co/IrMn Bilayer AITranslate
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Electric field (E-field) control of magnetism, especially for magnetization reversal, is essential for the design of energy-efficient spintronic devices. Here, a simple way of E-field control of magnetization reversal is proposed and accomplished on a doubly exchange-biased Co/IrMn bilayer with two collinear but opposite pinning directions. The sample was grown on a ferroelectric (FE) single crystalline (011)-oriented [Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN–PT) substrate, which has anisotropic and significant remanent strain. During film deposition, a specially designed magnetic field is produced by two identical “North” poles facing each other along the [01–1] axis, on which the PMN–PT demonstrates tensile strain. Moreover, E-field control of multiple magnetic states could also be realized in this unique doubly exchange-biased system. This work will provide a valuable reference for manufacturing low-energy magnetic storage memory devices
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DOI：https://doi.org/10.1021/acsaelm.3c01078
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Electric field (E-field) control of magnetism, especially for magnetization reversal, is essential for the design of energy-efficient spintronic devices. Here, a simple way of E-field control of magnetization reversal is proposed and accomplished on a doubly exchange-biased Co/IrMn bilayer with two collinear but opposite pinning directions. The sample was grown on a ferroelectric (FE) single crystalline (011)-oriented [Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN–PT) substrate, which has anisotropic and significant remanent strain. During film deposition, a specially designed magnetic field is produced by two identical “North” poles facing each other along the [01–1] axis, on which the PMN–PT demonstrates tensile strain. Moreover, E-field control of multiple magnetic states could also be realized in this unique doubly exchange-biased system. This work will provide a valuable reference for manufacturing low-energy magnetic storage memory devices
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| GB/T 7714-2015 | [1] Lujun Wei, Pai Liu, Jincheng Peng, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c01078. |
| MLA | [1] Lujun Wei, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c01078. |
| APA | [1] Lujun Wei, Pai Liu, Jincheng Peng, Zheng Zhou, Feng Li, Fei Huang, Yanghui Li, Xiaodan Chi, Yan Xing, Ruobai Liu, Jiarui Chen, Jiaju Yang, Wei Zhang, Qingyu Xu, Jun Du, & Yong Pu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c01078 |
| IEEE | [1] Lujun Wei, Pai Liu, Jincheng Peng, Zheng Zhou, Feng Li, Fei Huang, Yanghui Li, Xiaodan Chi, Yan Xing, Ruobai Liu, Jiarui Chen, Jiaju Yang, Wei Zhang, Qingyu Xu, Jun Du, and Yong Pu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c01078. keywords: {electric field control of magnetism magnetization reversal double exchange bias multiple magnetic states strainmediatedShow More} |