Near-Infrared Emitting of Zero-Dimensional Europium(II) Halide Scintillators: Energy Transfer Engineering via Sm2+ Doping Near-Infrared Emitting of Zero-Dimensional Europium(II) Halide Scintillators: Energy Transfer Engineering via Sm2+ Doping AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00534

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Near-infrared (NIR)-emitting scintillators, coupled with high quantum efficiency silicon-based photodetectors, have emerged as a promising solution for highly efficient radiation detection applications. However, the study of efficient NIR-emitting scintillators and their associated luminescence mechanism is still limited. In this work, we developed NIR-emitting zero-dimensional Cs4EuBr6 halide scintillators via Sm2+ doping. Single crystals of Cs4EuBr6 with varying Sm2+ concentrations were grown by the vertical Bridgman method. Under X-ray irradiation, the scintillation emission of highly Sm-doped Cs4EuBr6 single crystals is dominated by the Sm2+ 5d–4f emission peaking at 831 nm with a weak Eu2+ 5d–4f emission peaking at 443 nm. The energy transfer processes between Eu2+ and Sm2+ were investigated by using photoluminescence (PL) spectra, PL decay kinetics, and soft X-ray excited decay kinetics measurements. Based on the temperature-dependent PL decay results, we constructed a configurational coordinate diagram of Sm2+ in the Cs4EuBr6 host. Furthermore, we evaluated the gamma spectroscopy response of Cs4EuBr6:Sm single crystals using an avalanche photodiode detector known for its high sensitivity in the NIR wavelength region.