Enhanced Spin Lifetime with Elliot–Yafet Model-Like Temperature Dependence of Spin-Polarized Holes in p-Si Using Co2MnSi Tunnel Contact Enhanced Spin Lifetime with Elliot–Yafet Model-Like Temperature Dependence of Spin-Polarized Holes in p-Si Using Co2MnSi Tunnel Contact AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01092

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We report efficient electrical injection of spin-polarized carriers into p-type silicon from a highly spin-polarized ferromagnetic Heusler alloy Co2MnSi tunnel contact, spin accumulation in the semiconductor channel, and electrical detection of induced spin-polarized carriers at room temperature with the help of a three-terminal Hanle device. From the Hanle measurement, a sizable spin signal with a spin resistance–area product (RS·A) of ∼ 9.6 × 102 Ω μm2, a spin lifetime (τs) of 0.31 ns, a spin diffusion length (LSD) of 333 nm, and a large “true” value of spin accumulation (Δμ = 1.6 meV) are estimated at room temperature. The temperature variation of spin lifetimes has been found to follow the well-known Elliot–Yafet law. An inverted Hanle signal has been detected at room temperature, which serves as the experimental evidence of the existence of local magnetostatic fringe fields near the interface. Notably, the Hanle signal displays asymmetric dependence with respect to the polarity of the bias current, which may be attributed to the “flexoelectronic effect”. These outcomes unlock remarkable prospects for incorporating spin functionality into post-Moore-era electronic circuits for modern device applications at room temperature.