Depth-Adjustable Magnetostructural Phase Transition in Fe60V40 Thin Films AITranslate
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Phase transitions occurring within spatially confined regions can be useful for generating nanoscale material property modulations. Here we describe a magneto-structural phase transition in a binary alloy, where a structural transition from short-range order (SRO) to body centered cubic (bcc) results in the formation of depth-adjustable ferromagnetic layers, which reveal application-relevant magnetic properties of high saturation magnetization (Ms) and low Gilbert damping (α). Here we use Fe60V40 binary alloy films which transform from initially Ms = 17 kA/m (SRO structure) to 747 kA/m (bcc structure) driven by atomic displacements caused by penetrating ions. Simulations show that an estimated ∼1 displacement per atom triggers a structural transition, forming homogeneous ferromagnetic layers. The thickness of a ferromagnetic layer increases as a step-like function of the ion fluence. Microwave excitations of the ferromagnetic/non-ferromagnetic layered system reveals an α = 0.0027 ± 0.0001. The combination of nanoscale spatial confinement, low α, and high Ms provides a pathway for the rapid patterning of magnetic and microwave device elements.
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DOI:https://doi.org/10.1021/acsaelm.2c00499
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Phase transitions occurring within spatially confined regions can be useful for generating nanoscale material property modulations. Here we describe a magneto-structural phase transition in a binary alloy, where a structural transition from short-range order (SRO) to body centered cubic (bcc) results in the formation of depth-adjustable ferromagnetic layers, which reveal application-relevant magnetic properties of high saturation magnetization (Ms) and low Gilbert damping (α). Here we use Fe60V40 binary alloy films which transform from initially Ms = 17 kA/m (SRO structure) to 747 kA/m (bcc structure) driven by atomic displacements caused by penetrating ions. Simulations show that an estimated ∼1 displacement per atom triggers a structural transition, forming homogeneous ferromagnetic layers. The thickness of a ferromagnetic layer increases as a step-like function of the ion fluence. Microwave excitations of the ferromagnetic/non-ferromagnetic layered system reveals an α = 0.0027 ± 0.0001. The combination of nanoscale spatial confinement, low α, and high Ms provides a pathway for the rapid patterning of magnetic and microwave device elements.
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| GB/T 7714-2015 | [1] Md. Shadab Anwar, Hamza Cansever, Benny Boehm, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00499. |
| MLA | [1] Md. Shadab Anwar, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00499. |
| APA | [1] Md. Shadab Anwar, Hamza Cansever, Benny Boehm, Rodolfo A Gallardo, René Hübner, Shengqiang Zhou, Ulrich Kentsch, Simon Rauls, Benedikt Eggert, Heiko Wende, Kay Potzger, Juergen Fassbender, Kilian Lenz, Jürgen Lindner, Olav Hellwig, & Rantej Bali. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00499 |
| IEEE | [1] Md. Shadab Anwar, Hamza Cansever, Benny Boehm, Rodolfo A Gallardo, René Hübner, Shengqiang Zhou, Ulrich Kentsch, Simon Rauls, Benedikt Eggert, Heiko Wende, Kay Potzger, Juergen Fassbender, Kilian Lenz, Jürgen Lindner, Olav Hellwig, and Rantej Bali, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00499. keywords: {magnetostructural correlations phase transitions magnetic thin films ion irradiation shortrange order} |
