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Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy AITranslate

Shinnosuke Yasuoka; Ryoichi Mizutani; Reika Ota; Takahisa Shiraishi; Takao Shimizu; Masato Uehara; Hiroshi Yamada; Morito Akiyama; Hiroshi Funakubo
Tokyo Institute of Technology; Tokyo Institute of Technology; Tokyo Institute of Technology; Tokyo Institute of Technology; National Institute for Materials Science; National Institute of Advanced Industrial Science and Technology (AIST); National Institute of Advanced Industrial Science and Technology (AIST); National Institute of Advanced Industrial Science and Technology (AIST); Tokyo Institute of Technology
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Publisher: ACS
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Abstract AITranslate

The effect of pure mechanical strain on ferroelectricity was investigated for (001)-one-axis-oriented (Al0.8Sc0.2)N films deposited on (111)Pt-coated substrates with different thermal expansion coefficients. The mechanical lattice strains were successfully controlled by using substrates with different thermal expansion coefficients, though the composition of the films is the same. The changes in the remanent polarization (Pr) and coercive field (Ec) values of these films can be understood by the internal parameter u representing crystal anisotropy of a wurtzite structure. These results suggest that the ferroelectric properties of (Al1–xScx)N films can be tuned via crystal anisotropy.

KeyWords AITranslate

ferroelectrics AlScN thermal strain thin film crystal anisotropy
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DOI：https://doi.org/10.1021/acsaelm.2c00999

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Citation Information:

The effect of pure mechanical strain on ferroelectricity was investigated for (001)-one-axis-oriented (Al0.8Sc0.2)N films deposited on (111)Pt-coated substrates with different thermal expansion coefficients. The mechanical lattice strains were successfully controlled by using substrates with different thermal expansion coefficients, though the composition of the films is the same. The changes in the remanent polarization (Pr) and coercive field (Ec) values of these films can be understood by the internal parameter u representing crystal anisotropy of a wurtzite structure. These results suggest that the ferroelectric properties of (Al1–xScx)N films can be tuned via crystal anisotropy.

quote

GB/T 7714-2015 [1] Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00999.
MLA [1] Shinnosuke Yasuoka, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00999.
APA [1] Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, & Hiroshi Funakubo. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00999
IEEE [1] Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, and Hiroshi Funakubo, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00999. keywords: {ferroelectrics AlScN thermal strain thin film crystal anisotropy}