Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00922

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Monolayer MSi2N4 (M = Mo, W) has been fabricated and proposed as a promising channel material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the barrier between the metal electrode and MSi2N4 will affect device performance. Hence, it is desirable to reduce the barrier for achieving high-performance electrical devices. Here, using density functional theory (DFT) calculations, we systematically investigate the electrical properties of the van der Waals (vdW) contacts formed between MSi2N4 and two-dimensional (2D) metals (XY2, X = Nb, Ta, Y = S, Se, Te). It is found that the contact types and Schottky barrier height (SBH) of MSi2N4/XY2 can be effectively tuned by selecting 2D metals with different work functions (WFs). Specifically, n- and p-type Schottky contacts and Ohmic contacts can be achieved in MSi2N4/XY2. Among them, MoSi2N4/H-NbS2, WSi2N4/H-XS2, and WSi2N4/H-NbSe2 present Ohmic contacts due to the high WF of 2D metals. Notably, the pinning factors of MSi2N4/XY2 are obviously larger than those of the other 2D semiconductor/metal contacts, indicating that the Fermi-level pinning (FLP) effect is weak in MSi2N4/XY2. Therefore, vdW stack engineering can strongly weaken the FLP effect, making the Schottky barrier tunable in MSi2N4/XY2 by choosing 2D metals with different WFs. The results provide important insights into the selection of appropriate electrodes and valuable guidance for the development of MSi2N4-based 2D electronic devices with high performance.