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Synthesis, Characterization, Supramolecular Self-Assembly, and Organic Resistive Memory Applications of BODIPY Derivatives AITranslate

The University of Hong Kong; The University of Hong Kong; The University of Hong Kong; The University of Hong Kong; The University of Hong Kong; The University of Hong Kong; Jilin University; The University of Hong Kong
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Publisher: ACS
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Abstract AITranslate

A new class of BODIPY conjugated molecules modified with hydrophobic alkoxy chains or hydrophilic triethylene glycol chains has been designed, synthesized, and characterized. Supramolecular self-assembly behaviors of the compounds investigated by temperature-dependent ultraviolet–visible (UV–vis) absorption studies are found to display a cooperative growth mechanism with the formation of uniform and well-defined morphology of the aggregates in THF and water mixtures, which have been studied by transmission electron microscopy (TEM). Their self-assembly processes are found to be modulated by π–π stacking as well as hydrophobic interactions. The resistive memory devices fabricated with compounds 3 and 6 exhibit encouraging binary memory characteristics with low threshold voltages, high ON/OFF ratios, long retention times, and favorable stability.

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DOI:https://doi.org/10.1021/acsmaterialslett.2c01174

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Citation Information:

A new class of BODIPY conjugated molecules modified with hydrophobic alkoxy chains or hydrophilic triethylene glycol chains has been designed, synthesized, and characterized. Supramolecular self-assembly behaviors of the compounds investigated by temperature-dependent ultraviolet–visible (UV–vis) absorption studies are found to display a cooperative growth mechanism with the formation of uniform and well-defined morphology of the aggregates in THF and water mixtures, which have been studied by transmission electron microscopy (TEM). Their self-assembly processes are found to be modulated by π–π stacking as well as hydrophobic interactions. The resistive memory devices fabricated with compounds 3 and 6 exhibit encouraging binary memory characteristics with low threshold voltages, high ON/OFF ratios, long retention times, and favorable stability.

quote

GB/T 7714-2015 [1] Zuoyi Li, Eugene YauHin Hong, ChunTing Poon, et al. ACS Materials Letters, 2023(5). DOI:10.1021/acsmaterialslett.2c01174.
MLA [1] Zuoyi Li, et al., ACS Materials Letters, no. 5, 2023, https://doi.org/10.1021/acsmaterialslett.2c01174.
APA [1] Zuoyi Li, Eugene YauHin Hong, ChunTing Poon, YatHin Cheng, Michael HoYeung Chan, MingYi Leung, Lixin Wu, & Vivian WingWah Yam. (2023). ACS Materials Letters(5). https://doi.org/10.1021/acsmaterialslett.2c01174
IEEE [1] Zuoyi Li, Eugene YauHin Hong, ChunTing Poon, YatHin Cheng, Michael HoYeung Chan, MingYi Leung, Lixin Wu, and Vivian WingWah Yam, ACS Materials Letters, no. 5, 2023, doi: 10.1021/acsmaterialslett.2c01174.