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Deep Removal of Silicon and Phosphorus from Sodium Vanadate Solution by Co-precipitation AITranslate

National Key Laboratory of Rare Metal Separation and Comprehensive Utilization,Guangdong Provincial Institute of Resource Comprehensive Utilization;National Key Laboratory of Rare Metal Separation and Comprehensive Utilization,Guangdong Provincial Institute of Resource Comprehensive Utilization;National Key Laboratory of Rare Metal Separation and Comprehensive Utilization,Guangdong Provincial Institute of Resource Comprehensive Utilization;National Key Laboratory of Rare Metal Separation and Comprehensive Utilization,Guangdong Provincial Institute of Resource Comprehensive Utilization
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Publisher: Editorial Office of Rare Metals and Cemented Carbides
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Abstract AITranslate

Magnesium chloride and calcium chloride were used to co-precipitate silicon and phosphorus from sodium vanadate solution. The effects of precipitant dosage, solution pH value, purification temperature and time on silicon and phosphorus removal were investigated. The optimum process conditions are as follows: cMg∶(cSi+cP)=1.3,cCa∶(cSi+cP)=0.4,pH value of 9. 5,reaction duration of 3 h and temperature of 80 ℃. Under these conditions,the precipitation rates of silicon and phosphorous reach 95.67 % and 88.01 %, respectively,while the precipitation rate of vanadium is only 3.72%. The above method has excellent tech- nical indexes and broad prospects for industrial applications.

KeyWords AITranslate

sodium vanadate silicon phosphorus co-precipitation deep purification

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DOI:

Chinese Library Classification Number:TF841.3[冶金工程—有色金属冶金]

Citation Information:

Magnesium chloride and calcium chloride were used to co-precipitate silicon and phosphorus from sodium vanadate solution. The effects of precipitant dosage, solution pH value, purification temperature and time on silicon and phosphorus removal were investigated. The optimum process conditions are as follows: cMg∶(cSi+cP)=1.3,cCa∶(cSi+cP)=0.4,pH value of 9. 5,reaction duration of 3 h and temperature of 80 ℃. Under these conditions,the precipitation rates of silicon and phosphorous reach 95.67 % and 88.01 %, respectively,while the precipitation rate of vanadium is only 3.72%. The above method has excellent tech- nical indexes and broad prospects for industrial applications.

quote

GB/T 7714-2015 [1] LIU Zhen-zhen, LIU Yong, ZHOU Ji-kui, et al. Deep Removal of Silicon and Phosphorus from Sodium Vanadate Solution by Co-precipitation[J]. Rare Metals and Cemented Carbides, 2018(3): 6-9.
MLA [1] LIU Zhen-zhen, et al., "Deep Removal of Silicon and Phosphorus from Sodium Vanadate Solution by Co-precipitation." Rare Metals and Cemented Carbides, no. 3, 2018, pp. 6-9.
APA [1] LIU Zhen-zhen, LIU Yong, ZHOU Ji-kui, & LIU Mu-dan. (2018). Deep Removal of Silicon and Phosphorus from Sodium Vanadate Solution by Co-precipitation. Rare Metals and Cemented Carbides(3), 6-9.
IEEE [1] LIU Zhen-zhen, LIU Yong, ZHOU Ji-kui, and LIU Mu-dan, "Deep Removal of Silicon and Phosphorus from Sodium Vanadate Solution by Co-precipitation," Rare Metals and Cemented Carbides, no. 3, pp. 6-9, 2018. keywords: {sodium vanadate;silicon;phosphorus;co-precipitation;deep purification}