Investigation of Vacancies Transport in the Bilayer of the Cu2O1–x/CuO1–y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching Investigation of Vacancies Transport in the Bilayer of the Cu2O1–x/CuO1–y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00489

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Memristor is an emerging fourth fundamental electronic element that can reduce the complexity of memory-wall architecture in the existing system. Therefore, this area demands lots of focus on material, material growth, and the process engineering domains. Here, we report a memristor using Cu2O1–x/CuO1–y heterojunctions, which is different from the conventional devices in notable ways. First, the mechanism is not filamentary. Second, the underlying mechanism is Cu vacancy migration, and the SET voltage scales with an electric field in the active layer. We use chemical vapor deposition (CVD) to deposit the Cu2O1–x and CuO1–y layers, making the process scalable over large areas. CVD also enables precise morphology and grain structure control, crucial for achieving memristive characteristics. The best devices have a SET/RESET voltage of ∼1.1 V, an endurance of more than 100 cycles, and a retention of more than 10,000 s.