Ferroelectric Thin Films for Oxide Electronics Ferroelectric Thin Films for Oxide Electronics AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c01755

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Ferroelectric materials have set in motion numerous ultralow-energy-consuming device concepts that can be integrated into state-of-the-art complementary metal–oxide–semiconductor technology. Their nonvolatile, spontaneous electric polarization makes them promising candidates to control functionalities at the nanoscale with energy-efficient electric fields only. In this spotlight article, we start with a brief introduction to ferroelectric materials, the challenges involving the design of thin films and review the state-of-the-art of their integration into various electronic applications. Revolutionary in situ and operando diagnostic tools allowing the monitoring of the technology-relevant polarization state during the material design, or its operation will be detailed. Concepts such as chiral states in ferroelectrics and neuromorphic-type switching will be addressed to provide a comprehensive view on the evolution of ferroelectric states for the next generation of low-energy-consuming electronics. Finally, we discuss the most recent developments in the field, including the emergence of ferroelectricity at the nanoscale and in two-dimensional systems.