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Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation AITranslate

ChihYu Teng; ChiaChieh Cheng; KaiShin Li; Chenming Hu; JhihMin Lin; BiHsuan Lin; MauTsu Tang; YuanChieh Tseng
National Yang Ming Chiao Tung University; National Yang Ming Chiao Tung University;Taiwan Semiconductor Research Institute; University of California;National Synchrotron Radiation Research Center, Hsinchu 30076;National Synchrotron Radiation Research Center, Hsinchu 30076;National Synchrotron Radiation Research Center, Hsinchu 30076; National Yang Ming Chiao Tung University
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Publisher: ACS
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Abstract AITranslate

This study exploits the coupling of crystallographic and ferroelectric (FE) properties in an effort to enhance the FE performance of Hf1–xZrxO2 (HZO). The proposed scheme involved optimizing the orientation of orthorhombic (O)-phase crystals along the preferred polarization axis by applying an electric pulse during annealing. The proposed electric pulse annealing (EPA) process reduced the need for wake-up treatment; however, it imposed limited changes on the amount of the O-phase and leakage performance, compared with rapid thermal annealing (RTA). Excessively high EPA doses induced an O → M (monoclinic) phase transformation, which sacrificed FE polarization but preserved the wake-up-free-like properties. Our results demonstrate that optimizing the orientation of polycrystalline O-phase may be as important as maximizing the quantity of O-phase for HZO applications.

KeyWords AITranslate

ferroelectric Hf1−xZrxO2 orientation orthorhombic ferroelectric wakeup
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01582

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Citation Information:

This study exploits the coupling of crystallographic and ferroelectric (FE) properties in an effort to enhance the FE performance of Hf1–xZrxO2 (HZO). The proposed scheme involved optimizing the orientation of orthorhombic (O)-phase crystals along the preferred polarization axis by applying an electric pulse during annealing. The proposed electric pulse annealing (EPA) process reduced the need for wake-up treatment; however, it imposed limited changes on the amount of the O-phase and leakage performance, compared with rapid thermal annealing (RTA). Excessively high EPA doses induced an O → M (monoclinic) phase transformation, which sacrificed FE polarization but preserved the wake-up-free-like properties. Our results demonstrate that optimizing the orientation of polycrystalline O-phase may be as important as maximizing the quantity of O-phase for HZO applications.

quote

GB/T 7714-2015 [1] ChihYu Teng, ChiaChieh Cheng, KaiShin Li, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01582.
MLA [1] ChihYu Teng, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01582.
APA [1] ChihYu Teng, ChiaChieh Cheng, KaiShin Li, Chenming Hu, JhihMin Lin, BiHsuan Lin, MauTsu Tang, & YuanChieh Tseng. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01582
IEEE [1] ChihYu Teng, ChiaChieh Cheng, KaiShin Li, Chenming Hu, JhihMin Lin, BiHsuan Lin, MauTsu Tang, and YuanChieh Tseng, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01582. keywords: {ferroelectric Hf1−xZrxO2 orientation orthorhombic ferroelectric wakeup}