Superior Cryotronics Performance of the In/p-WS2 Schottky Interface Superior Cryotronics Performance of the In/p-WS2 Schottky Interface AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01314

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Transition metal dichalcogenides (TMDCs) have shown tremendous potential in high-performance cryotronics applications. In particular, in the semiconductor industry, TMDC-based Schottky barrier devices are in demand due to their low turn-on voltage that also remains effectual at low-temperature conditions. However, cryogenic temperature dependent electrical characteristics of Schottky device have only rarely been explored previously but with limited discussion. In the present article, the electrical characteristics of In/p-WS2 Schottky devices are studied comprehensively for their cryotronics application. A WS2 single crystal was grown by the direct vapor transport (DVT) technique. It is well characterized by EDAX, PXRD, and SEM in which the highly pure and crystalline nature of WS2 crystal is observed with hexagonal layered growth. A Hall effect measurement confirmed the p-type nature. Thermally evaporated indium thin films onto WS2 crystal showed a rectifying nature, having good Schottky characteristics. For the analytical study of Schottky device parameters, current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G–V) measurements have been carried out in the temperature range of 300–60 K with a 40 K step. Herein, as an outcome of the present study, remarkable Schottky characteristics are demonstrated with an ideality factor of 1.59, and an efficient device performance at 60 K makes In/p-WS2 suitable for future cryotronics applications.