Tuning Amorphous Selenium Composition with Tellurium to Improve Quantum Efficiency at Long Wavelengths and High Applied Fields Tuning Amorphous Selenium Composition with Tellurium to Improve Quantum Efficiency at Long Wavelengths and High Applied Fields AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00150

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Amorphous selenium (a-Se) is a large-area compatible photoconductor that has received significant attention toward the development of UV and X-ray detectors for a wide range of applications in medical imaging, life science, high-energy physics, and nuclear radiation detection. A subset of applications require detection of photons with spectral coverage from UV to infrared wavelengths. In this work, we present a systematic study utilizing density functional theory simulations and experimental studies to investigate optical and electrical properties of a-Se alloyed with tellurium (Te). We report hole and electron mobilities and conversion efficiencies for a-Se1–xTex (x = 0, 0.03, 0.05, 0.08) devices as a function of applied field, along with band gaps and comparisons to previous studies. For the first time, these values are reported at high electric field (>10 V/μm), demonstrating recovery of quantum efficiency in Se–Te alloys. A comparison to the Onsager model for a-Se demonstrates the strong field dependence in the thermalization length and expands on the role of defect states in device performance.