daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper

Enhancement in Interfacial Dzyaloshinskii–Moriya Interaction in Pt/CoFe(B)/MgO Structures by Suppression of FePt Interface Phases with the Addition of Boron AITranslate

Department of Physics and Chemistry;SK Hynix Inc.;SK Hynix Inc.;SK Hynix Inc.;SK Hynix Inc.; University of Ulsan;Convergence Research Institute;Convergence Research Institute; Korea University;Department of Physics and Chemistry;Department of Physics and Chemistry;Department of Physics and Chemistry;Department of Physics and Chemistry;Department of Physics and Chemistry;Department of Physics and Chemistry; University of Ulsan;Department of Physics and Chemistry;Department of Physics and Chemistry
AITranslate
Publisher: ACS
Share Citation Information Add to Favorites
111111

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

CoFeB is a versatile material used in various spintronics devices including magnetic random access memories, logic devices, and skyrmion-based devices. However, the interfacial Dzyaloshinskii–Moriya interaction energy density (D) values of CoFeB-based systems are lower than those of other ferromagnetic (FM) materials without glass formers. Therefore, strategies are necessary for enhancing D in CoFeB-based systems for skyrmion-based devices, which require adequate D to form Néel-type skyrmions. In this study, we investigate the trends of D by adjusting the boron content in the Pt/(Co10Fe90)100–xBx/MgO structure. The crystalline CoFe sample (boron 0%) exhibits the lowest D among all samples, at a value even lower than those of the amorphous CoFeB samples (12–20%); this phenomenon is contrary to the anticipated relationship between the strength of D and the crystallinity of FM. Moreover, adding 4% boron leads to a 3-fold increase in D. Our microstructure analysis reveals a correlation between D and the intermixed FePt phase between the Pt and CoFe(B) layers. Furthermore, we interpret the impact of the FePt phase on D based on the work function difference between the FePt and CoFe(B) layers, which is related to the degree of spin–orbit scattering.

KeyWords AITranslate

interfacial DMI CoFeB boron glassformer FePt proximityinduced magnetism work function
No data

Basic Information:

DOI:https://doi.org/10.1021/acsaelm.3c00667

Chinese Library Classification Number:

Citation Information:

CoFeB is a versatile material used in various spintronics devices including magnetic random access memories, logic devices, and skyrmion-based devices. However, the interfacial Dzyaloshinskii–Moriya interaction energy density (D) values of CoFeB-based systems are lower than those of other ferromagnetic (FM) materials without glass formers. Therefore, strategies are necessary for enhancing D in CoFeB-based systems for skyrmion-based devices, which require adequate D to form Néel-type skyrmions. In this study, we investigate the trends of D by adjusting the boron content in the Pt/(Co10Fe90)100–xBx/MgO structure. The crystalline CoFe sample (boron 0%) exhibits the lowest D among all samples, at a value even lower than those of the amorphous CoFeB samples (12–20%); this phenomenon is contrary to the anticipated relationship between the strength of D and the crystallinity of FM. Moreover, adding 4% boron leads to a 3-fold increase in D. Our microstructure analysis reveals a correlation between D and the intermixed FePt phase between the Pt and CoFe(B) layers. Furthermore, we interpret the impact of the FePt phase on D based on the work function difference between the FePt and CoFe(B) layers, which is related to the degree of spin–orbit scattering.

quote

GB/T 7714-2015 [1] JunSu Kim, Gukcheon Kim, Jinwon Jung, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00667.
MLA [1] JunSu Kim, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00667.
APA [1] JunSu Kim, Gukcheon Kim, Jinwon Jung, Kuyoul Jung, Junghyeok Kwak, Eunji Im, Jaehun Cho, JuneSeo Kim, WooYeong Kim, Jinyong Jung, Seongsoo Yoon, Soobeom Lee, Suhyeok An, Eunchong Baek, Dongryul Kim, Sanghoon Kim, JungIl Hong, & ChunYeol You. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00667
IEEE [1] JunSu Kim, Gukcheon Kim, Jinwon Jung, Kuyoul Jung, Junghyeok Kwak, Eunji Im, Jaehun Cho, JuneSeo Kim, WooYeong Kim, Jinyong Jung, Seongsoo Yoon, Soobeom Lee, Suhyeok An, Eunchong Baek, Dongryul Kim, Sanghoon Kim, JungIl Hong, and ChunYeol You, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00667. keywords: {interfacial DMI CoFeB boron glassformer FePt proximityinduced magnetism work function}