Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c01344

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Titanium nitride (TiN) has emerged as a highly promising alternative to traditional plasmonic materials. This study focuses on the inclusion of a Cr90Ru10 buffer layer between the substrate and thin TiN film, which enables the use of cost-effective, amorphous technical substrates while preserving high film quality. We report best-in-class TiN thin films fabricated on fused silica wafers, achieving a maximum plasmonic figure of merit, −ϵ′/ϵ″, of approximately 2.8, even at a modest wafer temperature of around 300 °C. Furthermore, we delve into the characterization of TiN thin film quality and fabricated TiN triangular nanostructures, employing attenuated total reflectance and cathodoluminescence techniques to highlight their potential applications in surface plasmonics.