Facile and Effective Band Gap Engineering of 2D Ruddlesden–Popper Perovskites with Improved Structural and Optoelectronic Properties Facile and Effective Band Gap Engineering of 2D Ruddlesden–Popper Perovskites with Improved Structural and Optoelectronic Properties AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c01508

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Incorporation of alkali metal ions (Li+, Na+, K+, Rb+, and Cs+) into 3D metal-halide perovskite crystal structures has resulted in improved crystallinity and film morphology, reduced trap density, and enhanced charge carrier transport. However, due to intrinsic structural instability associated with 3D perovskites, their alkali metal ion-doped semiconductors are not a suitable option for real device optoelectronics. In recent years, Ruddlesden–Popper (RP)-phase quasi-two-dimensional (2D) metal halide perovskites have drawn considerable attention due to their tunable energy band gap, large electron and hole diffusion lengths (∼10 μm), and lower recombination rates compared to pristine 2D metal halide perovskites (n = 1). However, alkali metal ion-incorporated RP perovskite systems are not explored much; therefore, we demonstrate the incorporation of Rb+, using the RbI precursor, into the quasi-2D RP perovskite (BA)2(MA)Pb2Br7 (BA = C4H9NH3; MA = CH3NH3), which has also resulted in the successive replacement of Br– with I– in the PbBr6 network. Subsequent replacement of Br– with I– finely tuned the energy band gap from 2.92 to 2.43 eV, while keeping the phase of the pristine lead bromide RP perovskite intact, as confirmed by X-ray diffraction investigations. MA+ cations available at the outer edge sites got partially exchanged with Rb ions, which in turn has regulated the perovskite crystal growth, whereas the excess Rb+ alloyed with replaced Br– to form RbBr, which resulted in the formation of thinner grain boundaries and thus showed improved charge transport. Transient photocurrent measurements performed for RbI-doped perovskites (lateral configuration photodetector: fluorine-doped tin oxide (FTO)/RP-perovskite/FTO of channel width ∼150 μm), for 35 cycles under standard Xe-lamp (100 mW/cm2) illumination, have shown strong and fast photocurrent response with large photoresponsivity (3.92 × 10–4 A/W). Comparison of structural, optical, and optoelectronic properties of RbI-doped RP perovskites is carried out with the mixed RP perovskites and has further confirmed that Rb+ incorporation plays an important role in enhancing the crystal growth.