Preparation and Growth Mechanism of Ge Nanowires AITranslate

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Chinese Library Classification Number:TB383[一般工业技术—材料科学与工程]

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The recent development of preparation and growth mechanism of Ge nanowires is introduced in detail. More detailed discussion is made on the solvent thermal synthesis method, chemical vapor deposition （CVD） method,template method and laser ablation method and the corresponding growth mechanisms including metal catalytic vapor-liquid-solid （VLS） mechanism,oxide-assisted growth mechanism.