Self-Aligned Contact Doping of WSe2 Metal–Insulator–Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane Self-Aligned Contact Doping of WSe2 Metal–Insulator–Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00211

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Conventional semiconductor fabrication methods are unsuitable for manufacturing two-dimensional material-based devices owing to the possibility of material contamination or damage, which significantly affects the device properties. In this study, the self-aligned contact doping method and remote oxygen plasma treatment were used to fabricate a WSe2-based top-gate field-effect transistor (FET) with minimal contamination and damage. The results of Raman spectroscopy and capacitance–voltage measurement indicated that neither the WSe2 nor the gate dielectric was damaged by the remote oxygen plasma. Additionally, the current–voltage measurement results exhibited excellent on/off ratio and field-effect mobility. The developed method can be used to fabricate FETs which have significantly high carrier concentrations and derive excellent electrical characteristics from WSe2-based devices. Therefore, the proposed process can serve as an effective device manufacturing method in the future.