High Stability Flexible Deep-UV Detector Based on All-Oxide Heteroepitaxial Junction High Stability Flexible Deep-UV Detector Based on All-Oxide Heteroepitaxial Junction AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00470

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Transparent flexible electronics constitute a significant research field. Flexible deep-ultraviolet (UV) detectors have received much attention due to their potential in the applications of healthcare, communications, astronomy, and environment monitoring. Recent studies have investigated a variety of flexible photodetectors but show that the transparent, flexible, chemical, and thermal stability performances of these detectors cannot meet the requirements for practical applications. In this study, we demonstrate transparent flexible deep-UV detectors based on the combination of high-quality epitaxial n-type β-Ga2O3 and p-type NiO films as a photodiode on a flexible muscovite substrate. The electrical current of this heterojunction is increased over a 1000 times for on/off ratio under 265 nm wavelength illumination with a reasonable response (<1 s). Moreover, these photodetectors also exhibit good thermal stability as well as excellent mechanical flexibility. Our results exhibit the superior performance of the oxide-based solar-blind deep-UV detectors for advanced flexible sensing and smart applications.