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Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability AITranslate

Xiaoxin Pan; Xiang Chen; Jinxia Duan; Yan Long; Yongcheng Wu; Jie Tang; Guokun Ma; Jun Zhang; Hao Wang
Hubei University; Hubei University; Hubei University; Hubei University; Hubei University; Hubei University; Hubei University; Hubei University; Hubei University
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Publisher: ACS
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Abstract AITranslate

The skyrocketing demand for rapid information storage and processing has propelled the advancement of resistive random-access memories (RRAMs). Lately, RRAMs with organo–inorganic metal halide perovskite (MHP) materials had demonstrated superior memory properties, which were crucial for next-generation memory devices. Herein, a hybrid three-dimensional/two-dimensional (3D/2D) perovskite heterostructure has been manufactured by introducing PEASCN to the top of CH3NH3PbI3–xClx. The 3D/2D RRAM device exhibited outstanding resistive switching (RS) properties with a stable window (∼103), remarkable endurance property (>103 cycles), low SET voltage (∼0.6 V), and high stability (storage period ≥150 days) compared with the 3D counterparts. Furthermore, the flexible RRAM also demonstrated excellent stability with the window of about 104 and conspicuous consistency under several stretching cycles. These provided an emerging route to develop high-performance MHP RRAMs.

KeyWords AITranslate

perovskite ion migration resistive randomaccess memory low SET voltage high stability
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DOI：https://doi.org/10.1021/acsaelm.3c01324

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Citation Information:

The skyrocketing demand for rapid information storage and processing has propelled the advancement of resistive random-access memories (RRAMs). Lately, RRAMs with organo–inorganic metal halide perovskite (MHP) materials had demonstrated superior memory properties, which were crucial for next-generation memory devices. Herein, a hybrid three-dimensional/two-dimensional (3D/2D) perovskite heterostructure has been manufactured by introducing PEASCN to the top of CH3NH3PbI3–xClx. The 3D/2D RRAM device exhibited outstanding resistive switching (RS) properties with a stable window (∼103), remarkable endurance property (>103 cycles), low SET voltage (∼0.6 V), and high stability (storage period ≥150 days) compared with the 3D counterparts. Furthermore, the flexible RRAM also demonstrated excellent stability with the window of about 104 and conspicuous consistency under several stretching cycles. These provided an emerging route to develop high-performance MHP RRAMs.

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GB/T 7714-2015 [1] Xiaoxin Pan, Xiang Chen, Jinxia Duan, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c01324.
MLA [1] Xiaoxin Pan, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c01324.
APA [1] Xiaoxin Pan, Xiang Chen, Jinxia Duan, Yan Long, Yongcheng Wu, Jie Tang, Guokun Ma, Jun Zhang, & Hao Wang. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c01324
IEEE [1] Xiaoxin Pan, Xiang Chen, Jinxia Duan, Yan Long, Yongcheng Wu, Jie Tang, Guokun Ma, Jun Zhang, and Hao Wang, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c01324. keywords: {perovskite ion migration resistive randomaccess memory low SET voltage high stability}