Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00409

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Nonvolatile memories (NVMs) based on van der Waals heterostructure have long attracted attention due to their atomic thinness, low energy consumption, and high performance, making them quite promising devices for next-generation memory. Here, a multilevel optoelectronic NVM based on multilayer graphene (MLG)/hexagonal boron nitride (h-BN)/rhenium disulfide (ReS2) with a top floating gate structure is designed and investigated. This device exhibits extraordinary storage capability with a large storage window ratio (∼63%), high on/off ratio (∼106), long data retention (>104 s), and excellent cyclic endurance (>1000 W/E cycles). In addition, the device shows a stable optical erasing property under laser illumination, where 13 and 7 discrete currents are clearly observed by applying multiple laser pulses and various laser powers, respectively.