daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper
English
Chinese 简体中文 English English
Home > Journals > ACS Applied Electronic Materials
‹ Previous Article Next Article ›

Selective Crystallization of Ferroelectric HfxZr1–xO2 via Excimer Laser Annealing AITranslate

Myeong Seop Song; Kunwoo Park; Kyoungjun Lee; Jung Woo Cho; Tae Yoon Lee; Jungwon Park; Seung Chul Chae
Seoul National University; Seoul National University; Seoul National University; Seoul National University; Seoul National University; Seoul National University; Seoul National University
AITranslate
Publisher: ACS
Share Citation Information Add to Favorites
111111

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

Herein, we report the ferroelectricity of HfxZr1–xO2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–voltage hysteresis. The laser-annealed Hf0.5Zr0.5O2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films.

KeyWords AITranslate

excimer laser annealing ferroelectricity antiferroelectricity hafnium oxide zirconium oxide crystallization
No data

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01555

Chinese Library Classification Number:

Citation Information:

Herein, we report the ferroelectricity of HfxZr1–xO2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–voltage hysteresis. The laser-annealed Hf0.5Zr0.5O2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films.

quote

GB/T 7714-2015 [1] Myeong Seop Song, Kunwoo Park, Kyoungjun Lee, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01555.
MLA [1] Myeong Seop Song, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01555.
APA [1] Myeong Seop Song, Kunwoo Park, Kyoungjun Lee, Jung Woo Cho, Tae Yoon Lee, Jungwon Park, & Seung Chul Chae. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01555
IEEE [1] Myeong Seop Song, Kunwoo Park, Kyoungjun Lee, Jung Woo Cho, Tae Yoon Lee, Jungwon Park, and Seung Chul Chae, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01555. keywords: {excimer laser annealing ferroelectricity antiferroelectricity hafnium oxide zirconium oxide crystallization}