Simulation Study of an Antimony Selenide Solar Cell with Graphene Oxide as Hole Transport Material Simulation Study of an Antimony Selenide Solar Cell with Graphene Oxide as Hole Transport Material AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00631

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This study analyses the photovoltaic (PV) properties of antimony selenide-based solar structures using a solar cell capacitance simulator (SCAPS-1D). The software was used to improve the PV performance of Sb2Se3-based solar cells using ZnSe as the buffer layer and graphene oxide (GO) as the hole transport layer (HTL). The solar cell’s performance was studied by varying the thickness, doping concentration, and defect density of the HTL and absorber layer. The performance was also studied by varying temperature, series and shunt resistance, and interface defects. Initially, a Sb2Se3/CdS/ITO-based solar cell was simulated with 4.98% efficiency and whose PV parameters agreed with the experimental result. There is an enhancement in solar cell performance by replacing CdS with ZnSe and adding GO up to a value of 17.36%. Further, optimizing various device parameters results in an enhancement of efficiency by up to 24.50%.