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Modulation of the Phase Transition Behavior of VO2 Nanofilms by the Coupling of Zr Doping and Thickness-Dependent Band Gap Modulation of the Phase Transition Behavior of VO2 Nanofilms by the Coupling of Zr Doping and Thickness-Dependent Band Gap AITranslate

Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University; Southwest Jiaotong University
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Publisher: ACS
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Abstract AITranslate

Vanadium dioxide (VO2) is a representative thermochromic material because of its unique first-order metal–insulator transition (MIT) at 68 °C. However, reducing the MIT temperature and clarifying the modulation relationship between Zr doping concentration and the MIT temperature of VO2 are extremely challenging. Here, we combine first-principles calculations and thermodynamic models to modulate the phase transition behavior of VO2 nanofilms by coupling Zr doping and the thickness-dependent band gap. It is observed that Zr doping causes changes in the structural stability and electronic and optical properties of VO2, which lead to a decrease in the MIT temperature. Comparing the calculated results with the experimental results, we clarify that the Zr doping concentration and MIT temperature of VO2 have a linear modulation relationship. These findings provide a concept for modulating the phase transition of VO2 nanomaterials.

KeyWords AITranslate

vanadium dioxide metal−insulator transition modulation relationship Zr doping thicknessdependent band gap
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c01202

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Citation Information:

Vanadium dioxide (VO2) is a representative thermochromic material because of its unique first-order metal–insulator transition (MIT) at 68 °C. However, reducing the MIT temperature and clarifying the modulation relationship between Zr doping concentration and the MIT temperature of VO2 are extremely challenging. Here, we combine first-principles calculations and thermodynamic models to modulate the phase transition behavior of VO2 nanofilms by coupling Zr doping and the thickness-dependent band gap. It is observed that Zr doping causes changes in the structural stability and electronic and optical properties of VO2, which lead to a decrease in the MIT temperature. Comparing the calculated results with the experimental results, we clarify that the Zr doping concentration and MIT temperature of VO2 have a linear modulation relationship. These findings provide a concept for modulating the phase transition of VO2 nanomaterials.

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GB/T 7714-2015 [1] Shuzhi Qin, Yicheng Fan, Xiang Qiu, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c01202.
MLA [1] Shuzhi Qin, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c01202.
APA [1] Shuzhi Qin, Yicheng Fan, Xiang Qiu, Guoqing Gou, Kun Zhang, Qingguo Feng, Gongwen Gan, & Wan Sun. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c01202
IEEE [1] Shuzhi Qin, Yicheng Fan, Xiang Qiu, Guoqing Gou, Kun Zhang, Qingguo Feng, Gongwen Gan, and Wan Sun, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c01202. keywords: {vanadium dioxide metal−insulator transition modulation relationship Zr doping thicknessdependent band gap}