Facile Synthesis and Single-Switch Antenna Application of Germanium-Doped Vanadium Dioxide Facile Synthesis and Single-Switch Antenna Application of Germanium-Doped Vanadium Dioxide AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00498

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Materials that undergo a phase transition from metallic to insulating, or metal–insulator transition (MIT), materials have become widely popular for their potential in emerging technologies due to their drastic conductivity change upon transitioning. Notable among the MIT materials is vanadium dioxide (VO2), and ongoing efforts are focused on tuning its MIT phase transition temperature (TMIT). In this report, VO2 germanium-doped nanoparticles with various germanium dopant levels were synthesized via a hydrothermal route and used in a simple single-switch antenna. Powder X-ray diffraction (XRD) analysis shows a monoclinic phase (M1) for both the pure and Ge-doped VO2 nanomaterials at room temperature, with no change in the diffraction pattern in the Ge-doped samples at low doping percentages; the M1 phase for both pure and Ge-doped VO2 was further confirmed by Raman spectroscopy. Energy-dispersive X-ray spectroscopy (EDS) showed Ge uniformly distributed in the nanomaterials. The nanoparticles’ morphology, imaged by field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM), reveals a morphology change from nanoparticles to nanosheets with increased dopant concentration. Ge-doped VO2 nanoparticle dispersions were used to print a single switch in an antenna solely obtained through a facile printing process. A vector network analyzer used to characterize the antenna performance showed that the germanium doping successfully changed the transition temperature of the material, demonstrating the capability of controlling the antenna operation frequencies as a function of material doping. Density functional theory (DFT) shows that substituting Ge into a V site of the crystal structure distorts the lattice and reduces the band gap at high doping percentages. These results provide insight into the potential of smart switches fabricated from Ge-doped VO2.