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Below the Urbach Edge: Solar Cell Loss Analysis Based on Full External Quantum Efficiency Spectra AITranslate

Jakub Holovský; Katarína Ridzoňová; Amalraj Peter Amalathas; Brianna Conrad; Rupendra Kumar Sharma; Xin Yu Chin; Ebin Bastola; Khagendra Bhandari; Randy J. Ellingson; Stefaan De Wolf;
Czech Technical University in Prague; Charles University; University of Jaffna; Czech Technical University in Prague; Czech Technical University in Prague;Institute of Microengineering (IMT); The University of Toledo; The University of Toledo; The University of Toledo; King Abdullah University of Science and Technology (KAUST)
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Publisher: ACS
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Abstract AITranslate

We suggest a new solar cell loss analysis using the external quantum efficiency (EQE) measured with sufficiently high sensitivity to also account for defects. Unlike common radiative-limit methods, where the impact of deep defects is ignored by exponential extrapolation of the Urbach absorption edge, our loss analysis considers the full EQE including states below the Urbach edge and uses corrections for band-filling and light-trapping. We validate this new metric on a whole range of photovoltaic materials and verify its accuracy by electrical simulations. Any deviations between the new metric and experimental open-circuit voltage are due to the presence of spatially localized defects and are explained as violations of the assumption of flat quasi-Fermi levels through the device.

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DOI：https://doi.org/10.1021/acsenergylett.3c00951

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Citation Information:

We suggest a new solar cell loss analysis using the external quantum efficiency (EQE) measured with sufficiently high sensitivity to also account for defects. Unlike common radiative-limit methods, where the impact of deep defects is ignored by exponential extrapolation of the Urbach absorption edge, our loss analysis considers the full EQE including states below the Urbach edge and uses corrections for band-filling and light-trapping. We validate this new metric on a whole range of photovoltaic materials and verify its accuracy by electrical simulations. Any deviations between the new metric and experimental open-circuit voltage are due to the presence of spatially localized defects and are explained as violations of the assumption of flat quasi-Fermi levels through the device.

quote

GB/T 7714-2015 [1] Jakub Holovský, Katarína Ridzoňová, Amalraj Peter Amalathas, et al. ACS Energy Letters, 2023(8). DOI:10.1021/acsenergylett.3c00951.
MLA [1] Jakub Holovský, et al., ACS Energy Letters, no. 8, 2023, https://doi.org/10.1021/acsenergylett.3c00951.
APA [1] Jakub Holovský, Katarína Ridzoňová, Amalraj Peter Amalathas, Brianna Conrad, Rupendra Kumar Sharma, Xin Yu Chin, Ebin Bastola, Khagendra Bhandari, Randy J. Ellingson, & Stefaan De Wolf. (2023). ACS Energy Letters(8). https://doi.org/10.1021/acsenergylett.3c00951
IEEE [1] Jakub Holovský, Katarína Ridzoňová, Amalraj Peter Amalathas, Brianna Conrad, Rupendra Kumar Sharma, Xin Yu Chin, Ebin Bastola, Khagendra Bhandari, Randy J. Ellingson, and Stefaan De Wolf, ACS Energy Letters, no. 8, 2023, doi: 10.1021/acsenergylett.3c00951.