First principles studies of neutral vacancies diffusion in SiC AITranslate
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In this paper we address the issue of C and Si vacancy diffusion in SiC by means of first principles electronic structure calculations. Besides a thorough analysis of the stable configurations involved, we characterize the minimum energy paths and the corresponding barriers of all the relevant diffusion mechanisms.
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DOI：https://doi.org/10.1016/S0927-0256(02)00422-6
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In this paper we address the issue of C and Si vacancy diffusion in SiC by means of first principles electronic structure calculations. Besides a thorough analysis of the stable configurations involved, we characterize the minimum energy paths and the corresponding barriers of all the relevant diffusion mechanisms.
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| GB/T 7714-2015 | [1] R. Rurali, E. Hernández, P. Godignon, et al. Computational Materials Science, 2003(27). DOI:10.1016/S0927-0256(02)00422-6. |
| MLA | [1] R. Rurali, et al., Computational Materials Science, no. 27, 2003, https://doi.org/10.1016/S0927-0256(02)00422-6. |
| APA | [1] R. Rurali, E. Hernández, P. Godignon, J. Rebollo, & P. Ordejón. (2003). Computational Materials Science(27). https://doi.org/10.1016/S0927-0256(02)00422-6 |
| IEEE | [1] R. Rurali, E. Hernández, P. Godignon, J. Rebollo, and P. Ordejón, Computational Materials Science, no. 27, 2003, doi: 10.1016/S0927-0256(02)00422-6. |