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α-CsPbI3 Colloidal Quantum Dots: Synthesis, Photodynamics, and Photovoltaic Applications AITranslate

Jiantuo Gan; Jingxuan He; Robert L. Z. Hoye; Abdurashid Mavlonov; Fazal Raziq; Judith L. MacManusDriscoll; Xiaoqiang Wu; Sean Li; Xiaotao Zu; Yiqiang Zhan; Xiaoyong Zhang; Liang Qiao;
University of Electronic Science and Technology of China; University of Electronic Science and Technology of China; University of Cambridge; University of Electronic Science and Technology of China; University of Electronic Science and Technology of China; University of Cambridge; University of Electronic Science and Technology of China; University of New South Wales; University of Electronic Science and Technology of China; Fudan University; Xi’an Shiyou University; University of New South Wales
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Abstract AITranslate

Owing to their defect tolerance and phase stability, α-CsPbI3 colloidal quantum dots (CQDs) with high mobility and 80–95% photoluminescence quantum yield (PLQY) are promising candidates for next-generation photovoltaics (PVs). Recently, α-CsPbI3 CQD PVs have begun to show promising power conversion efficiencies of 13.4%, with the open-circuit voltage approaching the Shockley–Queisser limit. These devices are stable in ambient conditions for several months. However, the short-circuit current density (JSC) of ∼12 mA/cm2 is low, and the limiting mechanisms are unclear. In this work, we review the strategies for improving the JSC and the effect of interfaces and mobility of the charge transport layers on carrier extraction. We also evaluate strategies to enhance the stability of CsPbI3 CQDs under illumination, as well as methods to elucidate the recombination losses in the CQD PVs and methods to reduce these losses. This work provides routes to achieve efficient and stable α-CsPbI3 CQD PVs.

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DOI：https://doi.org/10.1021/acsenergylett.9b00634

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Citation Information:

Owing to their defect tolerance and phase stability, α-CsPbI3 colloidal quantum dots (CQDs) with high mobility and 80–95% photoluminescence quantum yield (PLQY) are promising candidates for next-generation photovoltaics (PVs). Recently, α-CsPbI3 CQD PVs have begun to show promising power conversion efficiencies of 13.4%, with the open-circuit voltage approaching the Shockley–Queisser limit. These devices are stable in ambient conditions for several months. However, the short-circuit current density (JSC) of ∼12 mA/cm2 is low, and the limiting mechanisms are unclear. In this work, we review the strategies for improving the JSC and the effect of interfaces and mobility of the charge transport layers on carrier extraction. We also evaluate strategies to enhance the stability of CsPbI3 CQDs under illumination, as well as methods to elucidate the recombination losses in the CQD PVs and methods to reduce these losses. This work provides routes to achieve efficient and stable α-CsPbI3 CQD PVs.

quote

GB/T 7714-2015 [1] Jiantuo Gan, Jingxuan He, Robert L. Z. Hoye, et al. ACS Energy Letters, 2019(4). DOI:10.1021/acsenergylett.9b00634.
MLA [1] Jiantuo Gan, et al., ACS Energy Letters, no. 4, 2019, https://doi.org/10.1021/acsenergylett.9b00634.
APA [1] Jiantuo Gan, Jingxuan He, Robert L. Z. Hoye, Abdurashid Mavlonov, Fazal Raziq, Judith L. MacManusDriscoll, Xiaoqiang Wu, Sean Li, Xiaotao Zu, Yiqiang Zhan, Xiaoyong Zhang, & Liang Qiao. (2019). ACS Energy Letters(4). https://doi.org/10.1021/acsenergylett.9b00634
IEEE [1] Jiantuo Gan, Jingxuan He, Robert L. Z. Hoye, Abdurashid Mavlonov, Fazal Raziq, Judith L. MacManusDriscoll, Xiaoqiang Wu, Sean Li, Xiaotao Zu, Yiqiang Zhan, Xiaoyong Zhang, and Liang Qiao, ACS Energy Letters, no. 4, 2019, doi: 10.1021/acsenergylett.9b00634.