Negative differential resistance induced by the Jahn–Teller effect in single molecular coulomb blockade devices AITranslate
Abstract AITranslate
Highlights • Electronic transport properties in single molecular coulomb blockade devices. • Negative differential resistance (NDR) can be observed. • The NDR behavior involves Jahn–Teller effect and symmetry-breaking. Using valence bond theory in combination with a master equation technique, we have investigated the electron transport properties of benzene-based coulomb blockade devices. The results show that the benzene molecule undergoes a Jahn–Teller distortion when ionized, which lifts the state degeneracy. The lifted degenerate states couple differently to the left and right electrodes, leading to negative differential resistance. This type of negative differential resistance involves the Jahn–Teller effect and symmetry-breaking, which provides a way to design coulomb blockade devices with negative differential resistance behavior.
KeyWords AITranslate
Basic Information:
DOI:https://doi.org/10.1016/j.commatsci.2013.09.020
Chinese Library Classification Number:
Citation Information:
Highlights • Electronic transport properties in single molecular coulomb blockade devices. • Negative differential resistance (NDR) can be observed. • The NDR behavior involves Jahn–Teller effect and symmetry-breaking. Using valence bond theory in combination with a master equation technique, we have investigated the electron transport properties of benzene-based coulomb blockade devices. The results show that the benzene molecule undergoes a Jahn–Teller distortion when ionized, which lifts the state degeneracy. The lifted degenerate states couple differently to the left and right electrodes, leading to negative differential resistance. This type of negative differential resistance involves the Jahn–Teller effect and symmetry-breaking, which provides a way to design coulomb blockade devices with negative differential resistance behavior.
quote
| GB/T 7714-2015 | [1] Huahu Ying, WuXing Zhou, KeQiu Chen, et al. Computational Materials Science, 2014(82). DOI:10.1016/j.commatsci.2013.09.020. |
| MLA | [1] Huahu Ying, et al., Computational Materials Science, no. 82, 2014, https://doi.org/10.1016/j.commatsci.2013.09.020. |
| APA | [1] Huahu Ying, WuXing Zhou, KeQiu Chen, & Guanghui Zhou. (2014). Computational Materials Science(82). https://doi.org/10.1016/j.commatsci.2013.09.020 |
| IEEE | [1] Huahu Ying, WuXing Zhou, KeQiu Chen, and Guanghui Zhou, Computational Materials Science, no. 82, 2014, doi: 10.1016/j.commatsci.2013.09.020. |
