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Ag-Doped Halide Perovskite Nanocrystals for Tunable Band Structure and Efficient Charge Transport AITranslate

Shu Zhou; Yaping Ma; Guodong Zhou; Xin Xu; Minchao Qin; Yuhao Li; YaoJane Hsu; Hanlin Hu; Gang Li; Ni Zhao; Jianbin Xu; Xinhui Lu;
The Chinese University of Hong Kong; The Chinese University of Hong Kong; The Chinese University of Hong Kong; The Chinese University of Hong Kong; The Chinese University of Hong Kong; The Chinese University of Hong Kong;National Synchrotron Radiation Research Center, Hsinchu 30076; Hong Kong Polytechnic University; Hong Kong Polytechnic University; The Chinese University of Hong Kong; The Chinese University of Hong Kong; The Chinese University of Hong Kong
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Publisher: ACS
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Abstract AITranslate

Heterovalent doping of halide perovskite nanocrystals (NCs), offering potential tunability in optical and electrical properties, remains a grand challenge. Here, we report for the first time a controlled doping of monovalent Ag+ into CsPbBr3 NCs via a facile room-temperature synthesis method. Our results suggest that Ag+ ions act as substitutional dopants to replace Pb2+ ions in the perovskite NCs, shifting the Fermi level down toward the valence band and in turn inducing a heavy p-type character. Field effect transistors fabricated with Ag+-doped CsPbBr3 NCs exhibit 3 orders of magnitude enhancement in hole mobility at room temperature, compared with undoped CsPbBr3 NCs. Low-temperature electrical studies further confirm the influence of Ag+ doping on the charge-carrier transport. This work demonstrates the tunability of heterovalent doping on the electrical properties of halide perovskite NCs, shedding light on their future applications in versatile optoelectronic devices.

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DOI：https://doi.org/10.1021/acsenergylett.8b02478

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Citation Information:

Heterovalent doping of halide perovskite nanocrystals (NCs), offering potential tunability in optical and electrical properties, remains a grand challenge. Here, we report for the first time a controlled doping of monovalent Ag+ into CsPbBr3 NCs via a facile room-temperature synthesis method. Our results suggest that Ag+ ions act as substitutional dopants to replace Pb2+ ions in the perovskite NCs, shifting the Fermi level down toward the valence band and in turn inducing a heavy p-type character. Field effect transistors fabricated with Ag+-doped CsPbBr3 NCs exhibit 3 orders of magnitude enhancement in hole mobility at room temperature, compared with undoped CsPbBr3 NCs. Low-temperature electrical studies further confirm the influence of Ag+ doping on the charge-carrier transport. This work demonstrates the tunability of heterovalent doping on the electrical properties of halide perovskite NCs, shedding light on their future applications in versatile optoelectronic devices.

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GB/T 7714-2015 [1] Shu Zhou, Yaping Ma, Guodong Zhou, et al. ACS Energy Letters, 2019(4). DOI:10.1021/acsenergylett.8b02478.
MLA [1] Shu Zhou, et al., ACS Energy Letters, no. 4, 2019, https://doi.org/10.1021/acsenergylett.8b02478.
APA [1] Shu Zhou, Yaping Ma, Guodong Zhou, Xin Xu, Minchao Qin, Yuhao Li, YaoJane Hsu, Hanlin Hu, Gang Li, Ni Zhao, Jianbin Xu, & Xinhui Lu. (2019). ACS Energy Letters(4). https://doi.org/10.1021/acsenergylett.8b02478
IEEE [1] Shu Zhou, Yaping Ma, Guodong Zhou, Xin Xu, Minchao Qin, Yuhao Li, YaoJane Hsu, Hanlin Hu, Gang Li, Ni Zhao, Jianbin Xu, and Xinhui Lu, ACS Energy Letters, no. 4, 2019, doi: 10.1021/acsenergylett.8b02478.