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Open-Circuit Voltages Exceeding 1.26 V in Planar Methylammonium Lead Iodide Perovskite Solar Cells AITranslate

Zhifa Liu; Lisa Krückemeier; Benedikt Krogmeier; Benjamin Klingebiel; José A. Márquez; Sergiu Levcenko; Senol Öz; Sanjay Mathur; Uwe Rau; Thomas Unold; Thomas Kirchartz;
Fujian Institute of Research on the Structure of Matter;IEK5-Photovoltaics, Forschungszentrum Jülich;IEK5-Photovoltaics, Forschungszentrum Jülich;IEK5-Photovoltaics, Forschungszentrum Jülich;Department of Structure and Dynamics of Energy Materials;Department of Structure and Dynamics of Energy Materials; University of Cologne; University of Cologne;IEK5-Photovoltaics, Forschungszentrum Jülich;Department of Structure and Dynamics of Energy Materials; University of Duisburg−Essen
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Abstract AITranslate

We demonstrate open-circuit voltages exceeding 1.26 V for inverted planar CH3NH3PbI3 solar cells fabricated using a combination of lead acetate and PbCl2 precursors leading to smooth films and large grain sizes. Surface recombination is suppressed by careful optimization of the PTAA hole transport and PCBM electron transport layers. Suppression of bulk and surface recombination is verified by absolute photoluminescence measurements with external quantum efficiencies of ∼5% in complete cells. In addition, we find exceptionally long photoluminescence lifetimes in full cells and in layer stacks involving one or two contact layers. Numerical simulations reveal that these long photoluminescence lifetimes are only possible with extremely low recombination velocities at the interfaces between absorber and contact materials.

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DOI：https://doi.org/10.1021/acsenergylett.8b01906

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Citation Information:

We demonstrate open-circuit voltages exceeding 1.26 V for inverted planar CH3NH3PbI3 solar cells fabricated using a combination of lead acetate and PbCl2 precursors leading to smooth films and large grain sizes. Surface recombination is suppressed by careful optimization of the PTAA hole transport and PCBM electron transport layers. Suppression of bulk and surface recombination is verified by absolute photoluminescence measurements with external quantum efficiencies of ∼5% in complete cells. In addition, we find exceptionally long photoluminescence lifetimes in full cells and in layer stacks involving one or two contact layers. Numerical simulations reveal that these long photoluminescence lifetimes are only possible with extremely low recombination velocities at the interfaces between absorber and contact materials.

quote

GB/T 7714-2015 [1] Zhifa Liu, Lisa Krückemeier, Benedikt Krogmeier, et al. ACS Energy Letters, 2019(4). DOI:10.1021/acsenergylett.8b01906.
MLA [1] Zhifa Liu, et al., ACS Energy Letters, no. 4, 2019, https://doi.org/10.1021/acsenergylett.8b01906.
APA [1] Zhifa Liu, Lisa Krückemeier, Benedikt Krogmeier, Benjamin Klingebiel, José A. Márquez, Sergiu Levcenko, Senol Öz, Sanjay Mathur, Uwe Rau, Thomas Unold, & Thomas Kirchartz. (2019). ACS Energy Letters(4). https://doi.org/10.1021/acsenergylett.8b01906
IEEE [1] Zhifa Liu, Lisa Krückemeier, Benedikt Krogmeier, Benjamin Klingebiel, José A. Márquez, Sergiu Levcenko, Senol Öz, Sanjay Mathur, Uwe Rau, Thomas Unold, and Thomas Kirchartz, ACS Energy Letters, no. 4, 2019, doi: 10.1021/acsenergylett.8b01906.