A Bis-Stabilized Interface Strategy for Low-k Benzocyclobutene-Based Hollow Silica Nanocomposites AITranslate

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DOI：https://doi.org/10.1021/acsapm.3c00351

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A bis-stabilized interface strategy has been proposed to prepare high-performance low-dielectric (low-k) benzocyclobutene (BCB)-based nanocomposites by a rational-designed and facile-synthesized difunctional silane modifier. Hollow silica nanoparticles (HSNs) can be efficiently surface-modified with the difunctional silane to be evenly dispersed and chemically cross-linked with the BCB resin matrix during the post-thermal curing process, finally obtaining a series of HSNs-doped organic–inorganic nanocomposites. The dielectric properties of the resultant nanocomposites can be effectively adjusted by changing the doping ratios and cavity diameters of HSNs. Compared with commercial BCB resin, the dielectric constant of resultant 0.25 wt % HSNs-doped nanocomposites with a cavity diameter of 180 nm can be greatly reduced to 2.12 by 20%, maintaining the low level (10–4 at 1 kHz) of the dielectric loss, excellent thermal stability, and hydrophobicity as well. This study provides a facile and universal strategy to fabricate low-k BCB nanocomposites for future high-density advanced packaging applications.