Interstitial Mn2+-Driven High-Aspect-Ratio Grain Growth for Low-Trap-Density Microcrystalline Films for Record Efficiency CsPbI2Br Solar Cells AITranslate
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It is imperative to develop a large-aspect-ratio grain-based thin film with low trap density for high-performance inorganic perovskite CsPbI2Br solar cells. Herein, by using Mn2+ ion doping to modulate film growth, we achieved CsPbI2Br grains with aspect ratios as high as 8. It is found that Mn2+ ions insert into the interstices of the CsPbI2Br lattice during the growth process, leading to suppressed nucleation and a decreased growth rate. The combination aids in the achievement of larger CsPbI2Br crystalline grains for increased JSC values as high as 14.37 mA/cm2 and FFs as large as 80.0%. Moreover, excess Mn2+ ions passivate the grain boundary and surface defects, resulting in effectively decreased recombination loss with improved hole extraction efficiency, which enhances the built-in electric field and hence increases VOC to 1.172 V. As a result, the champion device achieves stabilized efficiency as high as 13.47%, improved by 13% compared with only 11.88% for the reference device.
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DOI:https://doi.org/10.1021/acsenergylett.8b00270
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It is imperative to develop a large-aspect-ratio grain-based thin film with low trap density for high-performance inorganic perovskite CsPbI2Br solar cells. Herein, by using Mn2+ ion doping to modulate film growth, we achieved CsPbI2Br grains with aspect ratios as high as 8. It is found that Mn2+ ions insert into the interstices of the CsPbI2Br lattice during the growth process, leading to suppressed nucleation and a decreased growth rate. The combination aids in the achievement of larger CsPbI2Br crystalline grains for increased JSC values as high as 14.37 mA/cm2 and FFs as large as 80.0%. Moreover, excess Mn2+ ions passivate the grain boundary and surface defects, resulting in effectively decreased recombination loss with improved hole extraction efficiency, which enhances the built-in electric field and hence increases VOC to 1.172 V. As a result, the champion device achieves stabilized efficiency as high as 13.47%, improved by 13% compared with only 11.88% for the reference device.
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| GB/T 7714-2015 | [1] Dongliang Bai, Jingru Zhang, Zhiwen Jin, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.8b00270. |
| MLA | [1] Dongliang Bai, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.8b00270. |
| APA | [1] Dongliang Bai, Jingru Zhang, Zhiwen Jin, Hui Bian, Kang Wang, Haoran Wang, Lei Liang, Qian Wang, & Shengzhong Frank Liu. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.8b00270 |
| IEEE | [1] Dongliang Bai, Jingru Zhang, Zhiwen Jin, Hui Bian, Kang Wang, Haoran Wang, Lei Liang, Qian Wang, and Shengzhong Frank Liu, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.8b00270. |
