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High Photovoltage of 1 V on a Steady-State Certified Hole Transport Layer-Free Perovskite Solar Cell by a Molten-Salt Approach AITranslate

Fraunhofer Institute for Solar Energy Systems ISE;Fraunhofer Institute for Solar Energy Systems ISE;Fraunhofer Institute for Solar Energy Systems ISE; Albert-Ludwigs-University Freiburg;Fraunhofer Institute for Solar Energy Systems ISE
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Publisher: ACS
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Abstract AITranslate

The determination of certified efficiency values for perovskite solar cells from current–voltage sweeps is under growing discussion. Here, we report for the first time a certified steady-state solar efficiency for a hole transport layer (HTL)-free perovskite cell of 12.6% measured continuously at maximum power point in an accredited laboratory. By applying a molten-salt-based MAPbI3 precursor solution, dense filling and improved perovskite crystallization inside the nanoporous graphite-based monolithic contact scaffold of the cell are achieved. A stabilized photovoltage as high as 1 V is achieved, representing the highest VOC reported for HTL-free MAPbI3-based devices. Charge transport properties are determined by switching from open- to short-circuit conditions. Strong and stable quenching of the photoluminescence indicates effective transportation and extraction of the photoexcited primary charge carriers. The existence of an efficient HTL-free device suggests that these cells are more of an n-p junction type than of n-i-p junction nature.

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DOI:https://doi.org/10.1021/acsenergylett.8b00293

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Citation Information:

The determination of certified efficiency values for perovskite solar cells from current–voltage sweeps is under growing discussion. Here, we report for the first time a certified steady-state solar efficiency for a hole transport layer (HTL)-free perovskite cell of 12.6% measured continuously at maximum power point in an accredited laboratory. By applying a molten-salt-based MAPbI3 precursor solution, dense filling and improved perovskite crystallization inside the nanoporous graphite-based monolithic contact scaffold of the cell are achieved. A stabilized photovoltage as high as 1 V is achieved, representing the highest VOC reported for HTL-free MAPbI3-based devices. Charge transport properties are determined by switching from open- to short-circuit conditions. Strong and stable quenching of the photoluminescence indicates effective transportation and extraction of the photoexcited primary charge carriers. The existence of an efficient HTL-free device suggests that these cells are more of an n-p junction type than of n-i-p junction nature.

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GB/T 7714-2015 [1] Lukas Wagner, Sijo Chacko, Gayathri Mathiazhagan, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.8b00293.
MLA [1] Lukas Wagner, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.8b00293.
APA [1] Lukas Wagner, Sijo Chacko, Gayathri Mathiazhagan, Simone Mastroianni, & Andreas Hinsch. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.8b00293
IEEE [1] Lukas Wagner, Sijo Chacko, Gayathri Mathiazhagan, Simone Mastroianni, and Andreas Hinsch, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.8b00293.