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Low-Temperature Nb-Doped SnO2 Electron-Selective Contact Yields over 20% Efficiency in Planar Perovskite Solar Cells AITranslate

Isfahan University of Technology; Isfahan University of Technology; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Uppsala University; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Uppsala University; Institute of Chemical Sciences and Engineering; Institute of Chemical Sciences and Engineering; Massachusetts Institute of Technology
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Publisher: ACS
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Abstract AITranslate

Low-temperature planar organic–inorganic lead halide perovskite solar cells have been at the center of attraction as power conversion efficiencies go beyond 20%. Here, we investigate Nb doping of SnO2 deposited by a low-cost, scalable chemical bath deposition (CBD) method. We study the effects of doping on compositional, structural, morphological, and device performance when these layers are employed as electron-selective layers (ESLs) in planar-structured PSCs. We use doping concentrations of 0, 1, 5, and 10 mol % Nb to Sn in solution. The ESLs were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, and ultraviolet–visible spectroscopy. ESLs with an optimum 5 mol % Nb doping yielded, on average, an improvement of all the device photovoltaic parameters with a champion power conversion efficiency of 20.5% (20.1% stabilized).

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DOI:https://doi.org/10.1021/acsenergylett.8b00055

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Citation Information:

Low-temperature planar organic–inorganic lead halide perovskite solar cells have been at the center of attraction as power conversion efficiencies go beyond 20%. Here, we investigate Nb doping of SnO2 deposited by a low-cost, scalable chemical bath deposition (CBD) method. We study the effects of doping on compositional, structural, morphological, and device performance when these layers are employed as electron-selective layers (ESLs) in planar-structured PSCs. We use doping concentrations of 0, 1, 5, and 10 mol % Nb to Sn in solution. The ESLs were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, and ultraviolet–visible spectroscopy. ESLs with an optimum 5 mol % Nb doping yielded, on average, an improvement of all the device photovoltaic parameters with a champion power conversion efficiency of 20.5% (20.1% stabilized).

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GB/T 7714-2015 [1] Elham Halvani Anaraki, Ahmad Kermanpur, Matthew T. Mayer, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.8b00055.
MLA [1] Elham Halvani Anaraki, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.8b00055.
APA [1] Elham Halvani Anaraki, Ahmad Kermanpur, Matthew T. Mayer, Ludmilla Steier, Taha Ahmed, SilverHamill TurrenCruz, Jiyoun Seo, Jingshan Luo, Shaik Mohammad Zakeeruddin, Wolfgang Richard Tress, Tomas Edvinsson, Michael Grätzel, Anders Hagfeldt, & JuanPablo CorreaBaena. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.8b00055
IEEE [1] Elham Halvani Anaraki, Ahmad Kermanpur, Matthew T. Mayer, Ludmilla Steier, Taha Ahmed, SilverHamill TurrenCruz, Jiyoun Seo, Jingshan Luo, Shaik Mohammad Zakeeruddin, Wolfgang Richard Tress, Tomas Edvinsson, Michael Grätzel, Anders Hagfeldt, and JuanPablo CorreaBaena, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.8b00055.