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Enhanced Photovoltaic Performance of FASnI3-Based Perovskite Solar Cells with Hydrazinium Chloride Coadditive AITranslate

Md. Emrul Kayesh; Towhid H. Chowdhury; Kiyoto Matsuishi; Ryuji Kaneko; Said Kazaoui; JaeJoon Lee; Takeshi Noda; Ashraful Islam;
University of Tsukuba; National Institute for Materials Science (NIMS); University of Tsukuba; Nihon University; National Institute of Advanced Industrial Science and Technology (AIST); Dongguk University; National Institute for Materials Science (NIMS); National Institute for Materials Science (NIMS)
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Publisher: ACS
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Abstract AITranslate

For the fabrication of efficient Sn-based perovskite solar cells (PSCs), deposition of uniform and pinhole-free perovskite films with low Sn4+ content remains a crucial factor. In this work, we present a coadditive engineering process by introduction of hydrazinium chloride (N2H5Cl) in a single precursor solvent system to fabricate FASnI3 perovskite films. The successful integration of N2H5Cl results in reduced concentration of Sn4+ content by 20% in the FASnI3 film leading to suppressed carrier recombination and pinhole-free uniform coverage. These remarkable improvements in the FASnI3 film results in power conversion efficiency (PCE) of Sn-based PSC up to 5.4% due to a significant increase in open-circuit voltage. Moreover, the best PSC without encapsulation showed stable shelf life up to 1000 h while retaining 65% of its initial PCE.

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DOI：https://doi.org/10.1021/acsenergylett.8b00645

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Citation Information:

For the fabrication of efficient Sn-based perovskite solar cells (PSCs), deposition of uniform and pinhole-free perovskite films with low Sn4+ content remains a crucial factor. In this work, we present a coadditive engineering process by introduction of hydrazinium chloride (N2H5Cl) in a single precursor solvent system to fabricate FASnI3 perovskite films. The successful integration of N2H5Cl results in reduced concentration of Sn4+ content by 20% in the FASnI3 film leading to suppressed carrier recombination and pinhole-free uniform coverage. These remarkable improvements in the FASnI3 film results in power conversion efficiency (PCE) of Sn-based PSC up to 5.4% due to a significant increase in open-circuit voltage. Moreover, the best PSC without encapsulation showed stable shelf life up to 1000 h while retaining 65% of its initial PCE.

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GB/T 7714-2015 [1] Md. Emrul Kayesh, Towhid H. Chowdhury, Kiyoto Matsuishi, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.8b00645.
MLA [1] Md. Emrul Kayesh, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.8b00645.
APA [1] Md. Emrul Kayesh, Towhid H. Chowdhury, Kiyoto Matsuishi, Ryuji Kaneko, Said Kazaoui, JaeJoon Lee, Takeshi Noda, & Ashraful Islam. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.8b00645
IEEE [1] Md. Emrul Kayesh, Towhid H. Chowdhury, Kiyoto Matsuishi, Ryuji Kaneko, Said Kazaoui, JaeJoon Lee, Takeshi Noda, and Ashraful Islam, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.8b00645.