Atomistic study of ion-beam deposition conditions for hard amorphous carbon AITranslate

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DOI：https://doi.org/10.1016/S0927-0256(02)00419-6

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The effect of deposition temperature on the formation of hard amorphous carbon (a-C) films from low and medium energy ions was studied by atomic scale simulation. Applying classical molecular dynamics with a modified hydrocarbon potential of Brenner, ion-beam deposition of carbon films with a thickness of ∼3–10 nm was simulated for ion energies E=10–80 eV, and for substrate temperatures ranging from 100 to 900 K. The dependence of the sp3 content and intrinsic stress in the simulated films on substrate temperature was found to agree qualitatively with experiment. At low ion energies and low substrate temperatures, the sp3 fraction increases with ion energy, giving at E>30 eV a highly sp3-bonded tetrahedral amorphous carbon (ta-C) with a high compressive stress. This trend also remains at room temperature, however with lower values of the sp3 content and stress, whereas above 500 K simulations with the Brenner potential predict a sharp transition from ta-C to graphitic carbon with dominating sp2 bonding.