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P-type Charge Transport and Selective Gas Sensing of All-Inorganic Perovskite Nanocrystals AITranslate

Jiyun Kim; Long Hu; Hongjun Chen; Xinwei Guan; Pradeep Raja Anandan; Feng Li; Jianbo Tang; ChunHo Lin; Kourosh KalantarZadeh; Antonio Tricoli; Tom Wu;
University of New South Wales (UNSW); University of New South Wales (UNSW); Australian National University (ANU); University of New South Wales (UNSW); University of New South Wales (UNSW); The University of Sydney; University of New South Wales (UNSW); University of New South Wales (UNSW); University of New South Wales (UNSW); Australian National University (ANU); University of New South Wales (UNSW)
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Abstract AITranslate

The remarkable optoelectronic property of all-inorganic halide perovskite nanocrystals (NCs) has inspired the exploration of these materials for a wide range of applications. However, the low conductivity of perovskite NCs thin film is regarded as the Achilles’ heel, hindering further development in electronic usage. To address this issue, we employed sequential treatments of methyl acetate soft soaking and Ostwald ripening on CsPbBr3 NC thin films, which improve the transport property and dramatically enhance the carrier lifetime from 11.56 to 112.5 ns. The field-effect transistor (FET) based on resulting CsPbBr3 NCs thin film exhibits p-type carrier mobility of 0.023 cm2 V–1 s–1 and ON/OFF ratio up to ∼104, which is on par with the bulk perovskite-based FETs. Furthermore, as a proof of concept, we demonstrate that the p-type CsPbBr3 NCs feature high gas-sensing selectivity to detect NO2 with a detection limit down to 0.4 ppm. The appealing charge-transport properties of these CsPbBr3 NCs underscore their potentials for versatile applications.

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DOI：https://doi.org/10.1021/acsmaterialslett.0c00346

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Citation Information:

The remarkable optoelectronic property of all-inorganic halide perovskite nanocrystals (NCs) has inspired the exploration of these materials for a wide range of applications. However, the low conductivity of perovskite NCs thin film is regarded as the Achilles’ heel, hindering further development in electronic usage. To address this issue, we employed sequential treatments of methyl acetate soft soaking and Ostwald ripening on CsPbBr3 NC thin films, which improve the transport property and dramatically enhance the carrier lifetime from 11.56 to 112.5 ns. The field-effect transistor (FET) based on resulting CsPbBr3 NCs thin film exhibits p-type carrier mobility of 0.023 cm2 V–1 s–1 and ON/OFF ratio up to ∼104, which is on par with the bulk perovskite-based FETs. Furthermore, as a proof of concept, we demonstrate that the p-type CsPbBr3 NCs feature high gas-sensing selectivity to detect NO2 with a detection limit down to 0.4 ppm. The appealing charge-transport properties of these CsPbBr3 NCs underscore their potentials for versatile applications.

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GB/T 7714-2015 [1] Jiyun Kim, Long Hu, Hongjun Chen, et al. ACS Materials Letters, 2020(2). DOI:10.1021/acsmaterialslett.0c00346.
MLA [1] Jiyun Kim, et al., ACS Materials Letters, no. 2, 2020, https://doi.org/10.1021/acsmaterialslett.0c00346.
APA [1] Jiyun Kim, Long Hu, Hongjun Chen, Xinwei Guan, Pradeep Raja Anandan, Feng Li, Jianbo Tang, ChunHo Lin, Kourosh KalantarZadeh, Antonio Tricoli, & Tom Wu. (2020). ACS Materials Letters(2). https://doi.org/10.1021/acsmaterialslett.0c00346
IEEE [1] Jiyun Kim, Long Hu, Hongjun Chen, Xinwei Guan, Pradeep Raja Anandan, Feng Li, Jianbo Tang, ChunHo Lin, Kourosh KalantarZadeh, Antonio Tricoli, and Tom Wu, ACS Materials Letters, no. 2, 2020, doi: 10.1021/acsmaterialslett.0c00346.