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Highly Air-Stable Carbon-Based α-CsPbI3 Perovskite Solar Cells with a Broadened Optical Spectrum AITranslate

Beihang University; Beihang University; Beihang University; Beihang University; Beihang University; Beihang University; Beihang University; Beihang University; Beihang University
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Publisher: ACS
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Abstract AITranslate

Inorganic cesium lead halide perovskites with superb thermal stability show promise to fabricate long-term operational photovoltaic devices. However, the cubic phase (α) of CsPbI3 with an appropriate band gap is unstable in air. We discover that highly stable α-CsPbI3 can be obtained in dry air (temperature: 20–30 °C; humidity: 10–20%) by replacing PbI2 with HPbI3 in a one-step deposition solution. Furthermore, the band gap of HPbI3-processed α-CsPbI3 is advantageously reduced from 1.72 to 1.68 eV due to the existence of tensile lattice strain. By employing such an α-CsPbI3 film in carbon-based perovskite solar cells (C-PSCs), a power conversion efficiency (PCE) of 9.5% is achieved, which is a record value for the α-CsPbI3 PSCs without hole transport material. Most importantly, over 90% of the initial PCE is retained for nonencapsulated devices after 3000 h of storage in dry air. Therefore, HPbI3-based one-step deposition presents a promising strategy to prepare high-performance and air-stable α-CsPbI3 PSCs.

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DOI:https://doi.org/10.1021/acsenergylett.8b00820

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Citation Information:

Inorganic cesium lead halide perovskites with superb thermal stability show promise to fabricate long-term operational photovoltaic devices. However, the cubic phase (α) of CsPbI3 with an appropriate band gap is unstable in air. We discover that highly stable α-CsPbI3 can be obtained in dry air (temperature: 20–30 °C; humidity: 10–20%) by replacing PbI2 with HPbI3 in a one-step deposition solution. Furthermore, the band gap of HPbI3-processed α-CsPbI3 is advantageously reduced from 1.72 to 1.68 eV due to the existence of tensile lattice strain. By employing such an α-CsPbI3 film in carbon-based perovskite solar cells (C-PSCs), a power conversion efficiency (PCE) of 9.5% is achieved, which is a record value for the α-CsPbI3 PSCs without hole transport material. Most importantly, over 90% of the initial PCE is retained for nonencapsulated devices after 3000 h of storage in dry air. Therefore, HPbI3-based one-step deposition presents a promising strategy to prepare high-performance and air-stable α-CsPbI3 PSCs.

quote

GB/T 7714-2015 [1] Sisi Xiang, Zhongheng Fu, Weiping Li, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.8b00820.
MLA [1] Sisi Xiang, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.8b00820.
APA [1] Sisi Xiang, Zhongheng Fu, Weiping Li, Ya Wei, Jiaming Liu, Huicong Liu, Liqun Zhu, Ruifeng Zhang, & Haining Chen. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.8b00820
IEEE [1] Sisi Xiang, Zhongheng Fu, Weiping Li, Ya Wei, Jiaming Liu, Huicong Liu, Liqun Zhu, Ruifeng Zhang, and Haining Chen, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.8b00820.